| 摘要 |
In a field emission cold cathode having a grid electrode with openings above tapering emitters (9) formed on a conductive substrate (1), the emitters (9) are formed on n-type regions (5) which have lower resistivity than the substrate and which are surrounded by trenches (3) extending downwards from the substrate surface. Also claimed is production of the above cold cathode by (a) forming a first insulating film on an n-type silicon substrate (1); (b) forming a mask, having openings in a trench-forming region surrounding an emitter-forming region, on the insulating film and structuring the insulating film; (c) forming trenches (3) in the substrate using the insulating film as mask; (d) forming a buried insulating film which fills the trenches and then removing the buried film and the first insulating film until the substrate surface is exposed; (e) doping the exposed substrate with n-type impurity atoms of preset concentration, to a depth corresponding to an emitter dispersion current region, to form an n-type region (5) of higher conductivity than the substrate (1); (f) forming a second insulating film and a gate electrode film (7) on the n-type region (5) and forming openings in the emitter-forming region of these films; and (g) forming emitters (9) on the n-type region in the openings.
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