| 摘要 |
<p>A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region (16), a base region (10) overlying the collector region, and an emitter region (12) including an AlGaN layer overlying at least part of said base region, forming a heterojunction (14) between said base region (10) and said emitter region (12). The emitter region may include two layers (26, 28). The HBT may be mounted on a SiC or sapphire substrate (18). The HBT may include a buffer layer (20) between the substrate (18) and the collector region (16).</p> |
