发明名称 Thin layer gas sensor
摘要 Thin layer gas sensor comprises: (a) a heatable metal oxide layer (1); (b) a 1<st> electrode arrangement (2) contacting the metal oxide layer; and (c) a 2<nd> electrode arrangement (3) contacting the metal oxide layer. The novelty is that the contact is formed between the 1<st> electrode arrangement and the metal oxide layer Schottky contact, and between the 2<nd> electrode arrangement and the metal oxide layer as Ohmic contact.
申请公布号 DE19710456(C1) 申请公布日期 1998.08.13
申请号 DE19971010456 申请日期 1997.03.13
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE 发明人 HOEFER, ULRICH, DIPL.-PHYS., 79115 FREIBURG, DE;BOETTNER, HARALD, DR.RER.NAT., 79108 FREIBURG, DE;WOELLENSTEIN, JUERGEN, DIPL.-ING., 34308 BAD EMSTAL, DE
分类号 G01N27/00;G01N27/12;G01N33/00;(IPC1-7):G01N27/12;G01N27/407 主分类号 G01N27/00
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