| 摘要 |
PROBLEM TO BE SOLVED: To form a capacitor having large capacity by a method wherein one electrode of the capacitor of a semiconductor device is formed on a semiconductor substrate, and the other electrode is formed adjacent to this electrode, and the capacitor is mainly comprised of side surfaces confronting the respective electrodes and an insulation film residing therebetween. SOLUTION: A capacitor is constituted by side surfaces of respective electrodes 3 mainly confronting each other and an interlayer insulation film 4 located therebetween, and a capacitance value C is C= (ε×ε0 )/d0 X}×S (wherein C: a capacitance value,ε:a dielectric constant of a dielectric,ε0 : a dielectric constant in a vacuum, d0 X: a film thickness of a dielectric, S: an area of a portion counter to an electrode). If this equation is applied to the capacitor,εis, namely a dielectric of the interlayer insulation film 4, and d0 X is an interval of side surfaces confronting a lower electrode 3 and an upper electrode 4, respectively, and S is an area of an upper electrode 5 and the lower electrode 3 counter to each other. By changing a disposition of the electrodes 3, 5 and contact of a wiring layer therewith, it can be contrived to make diversification of a capacitance value and a large capacity.
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