THIN SEMICONDUCTOR AND DEPOSITION THEREOF

摘要

PROBLEM TO BE SOLVED: To ensure a crystal structure in good order while activating the electric carrier by depositing a thin semiconductor physically or chemically, introducing impurity elements into the thin semiconductor and irradiating the thin semiconductor with a laser light having a wavelength resonance absorption to the lattice vibration of the compositional elements and the impurity elements thereby reforming the thin semiconductor. SOLUTION: A than semiconductor is deposited physically or chemically. More specifically, a thin crystal of 3C-SiC is deposited on a substrate 17 by laser CVD and implanted with N ions. The thin semiconductor is then irradiated with a free electron laser 10 and reformed. The tree electron laser 10 is irradiated at an interval of 100ms in the form of a 20μs wide macropulse light comprising micropulses of less than 10ps having pulse width of less than 10ps and power density of less than 180MW/cm<2> . The irradiation region is 2mm square and since macropulse 3000 shots (5min) are irradiated, an area of 0.942cm<-2> is irradiated when 3000 shots scanning us performed at a beam diameter of 200μmϕ.