发明名称 |
Apparatus for protecting gate electrodes of target transistors in a gate array from gate charging by employing free transistors in the gate array |
摘要 |
In a gate array having a plurality of free transistors and target transistors, a method and apparatus for protecting a gate electrode of a target transistor from gate charge by employing a free transistor as a gate electrode protection device. A target transistor is a transistor that has been determined to need gate charging protection. A free transistor is a transistor in the gate array which is not used to implement the logic design as embodied in the gate array. Initially, a base array is formed without any metal layers. Then, a determination is made as to which transistors require gate charging protection. The gate electrode of each target transistor determined to require gate charging is coupled to an associated drain or source electrode of a free transistor of the gate array. The gate electrode of the free transistor is connected to an appropriate voltage reference to turn the free transistor off.
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申请公布号 |
US5793069(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19960672411 |
申请日期 |
1996.06.28 |
申请人 |
INTEL CORPORATION |
发明人 |
SCHUELEIN, MARK EDWARD;BUTLER, EDWARD |
分类号 |
H01L27/02;H01L27/118;(IPC1-7):H01L27/10;H01L23/62 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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