| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory which is prevented from performing malfunction due to power source noise. SOLUTION: In a latch circuit of a sense section, a second latch circuit 602 and a third latch circuit 603 are supplied with the output of a first latch circuit 601 and the output of the second latch circuit 602 respectively. Thereby, when the selected memory cell stays at the first threshold value, the output of the first latch circuit 601 is brought to the 'L' level, accordingly by this data the output of the second latch circuit 602 is brought to the 'L' level and the output of the third latch circuit 603 is also brought to the 'L' level. Hence, even when the output data of the second differential amplifier and that of the third differential amplifier are changed by power source noise, the device operates normally irrespective of these kinds of data.</p> |
