| 摘要 |
PROBLEM TO BE SOLVED: To secure sufficient capacity and prevent a reduction in an etch rate of an insulation film without heightening stepped parts by a method wherein, after a core of a porous insulation film is formed and one electrode is formed on a surface of the core and the core is removed, a counter electrode is formed via a dielectric film on a surface of one electrode. SOLUTION: After a core 22a of a porous insulation film is formed and one electrode (lower electrode) 9 is formed on a surface of the core 22a and the core 22a is removed, a counter electrode (upper electrode) 11 is formed via dielectric film on a surface of one electrode 9 to manufacture a capacitor. By forming the core 22a of the porous insulation film, it is possible to form an irregularities in the lower electrode 9 formed on a surface of the core 22a and to increase a surface area of the lower electrode 9. Therefore, it is possible to increase capacity of a capacitor 12. Further, the insulation film constituting the core 22a is formed as porous quality, whereby as an etch rate in etching the insulation film is faster, a time for a step of etching-off can be lessened. |
