发明名称 |
Method for fabricating wiring in semiconductor device |
摘要 |
A method for fabricating wiring in a semiconductor device in which a conductor line and a contact hole are formed by self-alignment, includes the steps of: forming an insulating layer on a substrate; forming an etch-step layer on the insulating layer; etching the etch-stop layer of a wiring region connected to a window and the insulating layer to a predetermined thickness; forming a mask layer on the etch-stop layer and the insulating layer; etching the mask layer to remove the mask layer at the central part of the window; and etching the insulating layer of the central part of the window so as to form a contact hole. By applying such a method, a highly improved reliability can be obtained, and a process thereof is simplified by a single photolithography. Also, the contact hole is formed by self-alignment in the lengthwise direction and in the vertical direction of the conductor line.
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申请公布号 |
US5792704(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19960579477 |
申请日期 |
1996.01.04 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
JUN, YOUNG KWON;KIM, YONG KWON;PARK, JIN-WON;PARK, NAE-HAK |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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地址 |
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