| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain the single polarization characteristic by utilizing the difference of the thermal expansion coefficients of a mounting member and a semiconductor laser element, generating the single polarization- mode light, and intentionally generating the non-strain state or compression/ tensile strain in a semiconductor laser. SOLUTION: A ridge-type semiconductor laser element 10 sequentially has an SiN insulating film 11, a P-side Au electrode 12, a P-type GaAs cap layer 13, a P-type AlGaAs clad layer 14, an AlGaAs barrier layer 15, a GaAs active layer 16, an AlGaAs barrier layer 17, an N-type AlGaAs clad layer 18, an N- type AlGaAs buffer layer 19, an N-type GaAs substrate 20 and an N-type Au electrode 21 from the lower side. The single quantum well laser without strain having the GaAs active layer 16 of 200Åin this ridge-type semiconductor element 10 is assembled by using the mounting member of SiC, GaAs and Cu. By using the mounting member such as this, the low-noise laser is obtained.
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