| 摘要 |
PROBLEM TO BE SOLVED: To couple between different photosemiconductor devices without causing a dispersion loss by a method wherein thicknesses of photowaveguide layers are gradually changed stepwise along a waveguide direction. SOLUTION: A field absorption type semiconductor photomodular and a semiconductor photowaveguide path are integrated comprising: an n type InP substrate 1; a photoabsorption layer 2 comprising an InGaAsP multi-quantum well structure; a p type InP clad layer 4; a p-type InGaAs contact layer 5; a p-type ohmic electrode 6 made of Au/Zn/Au; a wiring and bonding pad 7 made of Ti/Pi/Au; an n-type ohmic electrode 8 made of AuGe/Ni/Au; and a SiO2 film 9. An area 20 is a semiconductor photowaveguide area, and an area 21 is a field absorption type semiconductor photo-modular area. Here, a photoabsorption layer 3 of, for example, a thickness 0.2μm in the modular area 21 is being thinned stepwise toward the waveguide area 20, and the length per step is, for example, 2μm, and the stepped part is 0.02μm. |
