| 摘要 |
A gallium nitride type compound semiconductor light emitting element, such as a semiconductor laser, a light emitting diode is constructed by forming an In0.06Ga0.94N buffer layer, an n-type In0.06Ga0.94N clad layer, an n-type In0.06Al0.15Ga0.79N clad layer, an undoped GaN active layer having layer thickness of 50 nm, a p-type In0.06Al0.15Ga0.79N clad layer and a p-type In0.06Ga0.94N cap layer on a (0001) azimuth sapphire substrate. A p-side electrode is formed on the p-type In0.06Ga0.94N cap layer, and an n-side electrode is formed on the n-type In0.06Ga0.94N clad layer. In the construction set forth above, a greater thickness for the active layer is provided. Also, tensile strain is applied to the active layer. Light is taken out in parallel direction to the substrate. This threshold current of the semiconductor laser is lowered and light emitting efficiency of the light emitting diode is improved.
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