| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacture which can cope with, especially, the further micronization of a semiconductor device, relating to the manufacture technique of the semiconductor device to open a contact hole in conformity with a base pattern. SOLUTION: A semiconductor device is manufactured by the process of forming wiring 18 covered with an insulating film 20 on a base substrate 10, the process of stacking an insulating film 24 and an insulating film 26 in order on the base substrate 10 where the wiring 18 is made, the process of forming an opening in the region including the region where the wiring 18 is made, by etching the insulating film 26 with the insulating film 24 as a stopper, and the process of forming the sidewall 30 consisting of the insulating film 24 at the sidewall of the wiring 18, by etching the insulating film 24 within the opening, and then, forming contact holes 34 and 36 connected with the base substrate 10 in conformity with the wiring 18. |
