发明名称 |
Photoresist strip method |
摘要 |
An improved method for removing a photoresist mask from an etched aluminum pattern after etching the pattern in a chlorine containing plasma has been created. The method is a two step process, in which a first stripping step is in a plasma containing O2 and H2O and a second stripping step is in a plasma containing O2.
|
申请公布号 |
US5792672(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19960618891 |
申请日期 |
1996.03.20 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHAN, LAP;MENG, SIMON CHOOI YEN;CHAN, TONY |
分类号 |
G03F7/42;H01L21/311;(IPC1-7):H01L21/465 |
主分类号 |
G03F7/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|