发明名称 |
Structure for controlling threshold voltage of MOSFET |
摘要 |
A method and structure for controlling the threshold voltage of a MOSFET is provided. The method compensates for the edge effect associated with prior art halo implants by providing an edge threshold voltage implant (the VT implant) which passes impurities through dielectric spacers, through the underlying source/drain regions and into the edges of the halo regions which lie in the channel. The VT implant reduces junction capacitance and does not degrade punchthrough voltage.
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申请公布号 |
US5793088(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19960664440 |
申请日期 |
1996.06.18 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
CHOI, JEONG YEOL;CHIEN, CHUNG-JEN;HAN, CHUNG CHYUNG;LIEN, CHUEN-DER |
分类号 |
H01L21/266;H01L21/336;H01L21/8238;H01L27/092;H01L29/10;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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