Method of manufacturing semiconductor device

摘要

A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate; forming a gate electrode on the substrate; forming impurity regions on both sides of the gate electrode; forming a first sidewall on the side of the gate electrode; forming a second sidewall on the side of the first sidewall; forming a third sidewall on the side of the second sidewall; and selectively removing only the second sidewall to thereby form a contact area. It is possible to precisely form a fine contact area so that the size of a semiconductor device can be reduced.