| 摘要 |
PROBLEM TO BE SOLVED: To prevent separation of a Pt layer of a lower electrode from a barrier layer (TiN layer) by a method wherein, after the barrier layer and lower electrode are sequentially formed, they are heat treated in the nitrogen or inactive gas atmosphere, and an interface between the barrier layer and lower electrode is alloyed, and thereafter a ferroelectric film is formed on the lower electrode. SOLUTION: After switching transistors 11 are coated with an interlayer insulation film 2, surfaces of the interlayer insulation film 2 and a polysilicon plug 3 are flatted and a TiN film serving as a barrier layer 7 is formed using a sputter method, and a TiN/Ti film is formed, and continuously a Pt film is deposited to form a lower electrode. Next, they are heat-treated (annealed) in the inactive gas atmosphere of nitrogen, argon and the like, and a Pt/TiN/Ti lamination film is alloyed to form lamination films 5a, 6a. Further, after a PZT7 film is formed using a sol-gel method and crystallized, an insulation film 8 is deposited and a contact hole is formed on an upper part of a ferroelectric film. Thereafter, a Pt upper electrode 13 is formed. A film separation is hard to occur. |
