Nonvolatile memory device and manufacturing method thereof

摘要

A nonvolatile memory device and a manufacturing method thereof are provided. The nonvolatile memory device includes memory cells which are formed in a cell array region, peripheral circuit devices which are formed in a peripheral circuit region at the periphery of the cell array region, a field oxide film which is formed between the cell array region and the peripheral circuit region, and a dummy conductive pattern which is formed along and on the field oxide film. Accordingly, damage to the substrate formed between the peripheral circuit region and the cell array region can be reduced, thus a characteristic of insulation between devices can be enhanced.