发明名称 Method for manufacturing of an SRAM device
摘要 In a semiconductor device, an undoped polysilicon layer on the uppermost layer is used as a high resistor device without any patterning. A metal wiring layer formed on this high resistor device is connected to a conductive layer formed below the high resistor device via a contact hole extending through the high resistor device. In addition, by oxidizing an end portion, exposed in the contact hole, of the high resistor device, an oxide film is interposed between the high resistor device and the metal wiring layer to attain electrical insulation therebetween. In this manner, the high resistor device is formed of the undoped polysilicon layer by using a multilayered polysilicon structure including the undoped polysilicon layer. Therefore, the integration degree can be increased, and at the same time, a stepped portion accompanying with the multilayered silicon structure is relaxed to improve the flatness of the surface and prevent poor step coverage or bridging of an upper wiring layer.
申请公布号 US5792683(A) 申请公布日期 1998.08.11
申请号 US19970837335 申请日期 1997.04.11
申请人 NKK CORPORATION 发明人 HAYASHI, TAKETOSHI;TAGAMI, RYUZO
分类号 H01L27/11;(IPC1-7):H01L21/823;H01L21/824 主分类号 H01L27/11
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