| 发明名称 |
Self-aligned method for forming contact with zero offset to gate |
| 摘要 |
A method and structure for self-aligned zero-margin contacts to active and poly-1, using silicon nitride (or another dielectric material with low reflectivity and etch selectivity to oxide) for an etch stop layer and also for sidewall spacers on the gate.
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| 申请公布号 |
US5793114(A) |
申请公布日期 |
1998.08.11 |
| 申请号 |
US19960639316 |
申请日期 |
1996.04.24 |
| 申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
NGUYEN, LOI N.;HODGES, ROBERT LOUIS |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/336;H01L21/60;H01L21/768;H01L21/8234;H01L27/088;H01L29/78;(IPC1-7):H01L23/485;H01L23/523;H01L23/528;H01L29/41 |
主分类号 |
H01L21/302 |
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