| 摘要 |
PROBLEM TO BE SOLVED: To provide a process which is improved in a CVD process such as a process for deposition of tungusten silicon compd. (WSix ) from tungsten hexafluoride (WF6 ) and dichlorosilane (DCS), to provide a process including a purge step for new silane (SiH4) following the deposition of WSix on a substrate, and further, to provide a process including a soak step for new SiH4 in advance of the deposition of WSix on the substrate. SOLUTION: The method for these processes include a step for depositing a substance on the surface of the substrate 28 by using a mixture of gases and a step for purging a residual gas by allowing SiH4 to flow into a chamber 12. It is preferable to use a mixture of WF6 , dichlorosilane and a noble gas, thereby depositing WSix on a semiconductor wafer 28, and thereafter, SiH4 is flowed into the chamber 12, thereby purging residual WF6 and dichlorosilane from the chamber 12.
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