| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for forming no conductor material at a stepped part formed of an upper material having a large pattern size. SOLUTION: The method for manufacturing a semiconductor device comprises the steps of forming a resist mask having a small pattern size and a resist mask having a large pattern size on an upper material film on a semiconductor substrate, forming the mask having the large size in a tapered shape by heat treating the mask, forming the upper material 7 having the tapered shape under the mask having large size by patterning the upper material film by dry etching with the resist mask as an etching ask, and forming a sidewall conductor film 9 only at a sidewall of the material 7 formed under the mask having smaller size by anisotropically dry etching after depositing the film on the entire surface. |
