| 摘要 |
PROBLEM TO BE SOLVED: To obtain a material reducing only specific resistance at ordinary temp. without affecting resistance-temp. coefft. and capable of reducing the size of an applied product such as a device for protection from an overcorrect by specifying the molar ratio of titanium dioxide to barium and that of titanium nitride to barium in a barium titanium-based semiconductor porcelain material contg. a semiconductor forming element. SOLUTION: When the molar ratio of titanium dioxide to barium and that of titanium nitride to barium are represented by (x) and (y), respectively, x+y=1.01, 0.61<=x<=1.0 and 0.01<=y<=0.4 are satisfied. A compsn. prepd. by adding at least a semiconductor forming element such as yttrium in the form of yttria to barium titanate is calcined, titanium nitride preferably having 0.6-3.0μm average particle diameter is added and they are fired to produce the objective material. In the case of <0.6μm average particle diameter, surface active energy increases and TiN is liable to oxidation. In the case of >3.0μm, TiN is less liable to mix with other particles, and thus the particle size become uneven. |
