发明名称 |
Non-photosensitive, vertically redundant 2-channel alpha -Si:H thin film transistor |
摘要 |
A thin film transistor having two vertically stacked channels and dual gate non-photosensitive structure, where the source drain to bottom gate structure is self-aligned. This structure occupies the same area on a substrate as a conventional single gate thin film transistor. This invention also discloses a process for manufacturing a dual gate structure with a simple three mask procedure.
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申请公布号 |
US5793072(A) |
申请公布日期 |
1998.08.11 |
申请号 |
US19960695356 |
申请日期 |
1996.08.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KUO, YUE |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/12;H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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