| 摘要 |
PROBLEM TO BE SOLVED: To isolate a high voltage light current main circuit from a low voltage low current control circuit by employing a planar Si light receiving element and forming a thin film EL element on SiO2 film covering the surface thereof. SOLUTION: Major surface of an Si substrate 1 is coated with SiO2 film 2, thus forming first diffusion layers 4a, 4b. A second diffusion layer 7a is formed in the first diffusion layers 4a and a metal electrode and a protective layer are formed thereon, thus constituting a planar Si element thyristor. A transparent electrode 12, a thin organic EL element and a metal electrode 14 constituted of an organic film 13 are then on the protective layer. When a current is fed from the anode to the cathode of the thin organic EL element under blocked state of the thyristor, light is emitted from the thin organic EL element and passed through transparent electrode 12 and the SiO2 film 2 to the thyristor. Consequently, electrons and holes generated in the vicinity of the depletion layer 20 part in the thyristor migrate to supply a trigger current for a switching element and the thyristor is conducted. |
