| 摘要 |
PROBLEM TO BE SOLVED: To obtain a process control parameter capable of realizing desired physical or electrical characteristics of a sample after semiconductor process steps. SOLUTION: The method comprises steps: 1) experimentally obtaining the homology of a sample, 2) obtaining a first fractal dimension Df of the sample homology, 3) obtaining the physical or electrical characteristics(PEC) of the sample, 4) repeating experiments with varying process control parameters OPs to obtain a first relation between OPs and Df and second relation between D1 and PEC, 5) obtaining the sample homology by simulation, 6) obtaining the second fractal dimension DF of the sample homology, 7) repeating the simulation with varying process internal parameters IPs to obtain a third relation between IPs and Df, 8) obtaining a fourth relation between IPs and F, 9) correcting the firs relation, based on the further relation, 10) obtaining D1 corresponding to desired PEC from the second relation and 11) obtaining OPs corresponding to Df from the corrected first relation. |
