PROCEDE DE REALISATION D'UNE COUCHE MINCE DE MATERIAU SEMICONDUCTEUR

摘要

The method involves implanting a semiconductor plate with a dose of ions to fragilize the plate at level of a reference plane, where fragilization is insufficient to obtain separation during heat processing step. The plate is separated into a thin layer (6) and a remaining mass (7) on sides of the plane by applying mechanical forces between the two parts. The plate is contacted and integrated, before the separation step, with an applicator (8) so as to assure, between the applicator and a head face (2), a binding energy sufficient for resisting to the application of mechanical forces.