| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the voltage resistance so as to stabilize the operation of a thin film electron source, and to prolong the lifetime by using a zondoved diamond thin film for an insulating layer of a thin film electron source, which has the three-layered structure of lower electrode-insulating layer-upper electrode. SOLUTION: In a MIM type thin film electron source, a diamond thin film 5 is formed on a platinum metal base board 4 used as a lower electrode. The diamond thin film 5 is formed by using hydrogen gas, in which acetone at about 1% by weight is mixed, as a raw material gas, and performing a chemical vapor deposition method using microwave plasma. Film thickness of the diamond thin film 5 is set at about 3mm. A metal film 6 as an upper electrode is formed at about 5mm of thickness on the diamond thin film 5. Direct current voltage is applied between the upper electrode 6 and the lower electrode 4. With this thin film electron source, electric breakdown is not generated for 50 hours. Furthermore, electron is stably emitted, restraining the generation of noise.</p> |
