CONTACT WIRING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURE OF CAPACITOR BY UTILIZING THE METHOD

摘要

PROBLEM TO BE SOLVED: To improve a DRAM device in capacitor characteristics so as to enhance the reliability of semiconductor device by a method wherein electrode substance is easily filled in a buried contact hole of a high aspect ratio and provided in a highly integrated semiconductor device, and a diffusion-preventive film is protected against oxidation when a capacitor is formed by using a ferroelectric film. SOLUTION: A first process where a first conductive film 108 and a second conductive film 110 are evaporated on a semiconductor substrate 100, where a buried contact hole 104 is provided, through a CVD method and a PVD method and a second process where the first conductive film 108 and second conductive film 110 are thermally treated at high temperatures to reflow are provided.