| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor memory device to reduce variation in contact resistance, and ensure an enough withstand voltage between a storage node and a substrate, and an electric capacity. SOLUTION: A capacitor cell 10 is composed of a columnar storage 12 of polycrystalline silicon, a capacitor insulating film 13 is composed of Si3 N4 , and an upper electrode 14 composed of aluminum. The columnar storage 12 is composed of a base 12a of polycrystalline silicon doped with phosphorus in concentration of 4×10<20> cm<-3> , an inner part 12b of polycrystalline silicon doped with phosphorus in concentration of 1×10<20> cm<-3> , an upper part 12c of polycrystalline silicon doped with phosphorus in concentration of 7×10<20> cm<-3> , and a side part 12d of polycrystalline silicon layer doped with phosphorus in concentration of 7×10<20> cm<-3> . |
