发明名称 BLANKS FOR PHOTOMASK WITH ALIGNMENT MARK AND PRODUCTION THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide blanks for a photomask capable of improving the accuracy of pattern exposure positions and decreasing the variations in the accuracy of the pattern exposure positions and to provide a process for manufacturing such blanks for the photomask. SOLUTION: The blanks 100 for the photomask to be written with patterns in the resist part 140 applied thereon of a pattern exposure system of a system to execute pattern exposure of the photoresist on a substrate by using graphic data in order to manufacture the photomask for production of semiconductor elements are formed by providing one surface of a substrate 110 transparent to exposure light at the time of production of the semiconductor elements with light shielding layers 120 consisting of thin metallic sheets having light shieldability to the exposure light. The one points or plural points of the regions which are not pattern writing regions of the light shielding layers are provided with alignment marks 130 for having the positions, inclination, distortion, etc., of the blanks 100 at the time of pattern exposure recognized by a writing machine.</p>
申请公布号 JPH10207039(A) 申请公布日期 1998.08.07
申请号 JP19970019610 申请日期 1997.01.20
申请人 DAINIPPON PRINTING CO LTD 发明人 MURAI FUMIMASA;YAMAMOTO KAZUAKI
分类号 G03F1/20;G03F1/42;H01L21/027;(IPC1-7):G03F1/08;G03F1/16 主分类号 G03F1/20
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