| 摘要 |
<p>PROBLEM TO BE SOLVED: To stabilize the threshold of TFTs by allowing a metallic layer to exist in the position nearer a substrate than the thin-film semiconductors and gate oxidized films of the TFTs on a TFT array substrate and impressing biases on these metallic layers with respect to the TFTs. SOLUTION: The metallic layers 2 consisting of Cr(chromium), Mo(molybdenum), etc., are deposited by sputtering, etc., over the entire surface of the glass substrate 1. Insulating films, such as for example, SiO2 films 3, are formed by a plasma CVD method, etc., on the metallic layers 2. Next, a-Si films 4 are formed by the plasma CVD method, etc., on the SiO2 films 3. The a-Si films 4 are then crystallized by excimer laser annealing. If, in this case, the laser annealing is executed at a high laser energy density, the metallic layers 2 exist between the a-Si films 4 and the glass substrate 1 and, therefore, the migration of the impurities in the glass substrate 1 into the a-Si films 4 is shut off by the metallic layers 2. The biases are impressed on the metallic layers 2 with respect to the TFTs in a later module production stage.</p> |
