发明名称 SEMICONDUCTOR SUBSTRATE AND MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the occupied area of an alignment mark-forming region. SOLUTION: A contact alignment mark 18A is provided on a layer insulation film 17, and a wiring alignment mark 19A is formed slightly larger above a gate alignment mark 15A while a shield film 19S shields all other lower alignment marks. Thus, the opaque film-made alignment marks and shield film shield all the lower alignment marks, thereby laminating one above another.
申请公布号 JPH10209015(A) 申请公布日期 1998.08.07
申请号 JP19970010653 申请日期 1997.01.23
申请人 NEC CORP 发明人 HAMADA TAKEHIKO;HAMADA MASAYUKI
分类号 G03F9/00;H01L21/027;H01L23/544;(IPC1-7):H01L21/027 主分类号 G03F9/00
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