发明名称 METHOD AND APPARATUS FOR PROJECTION EXPOSURE
摘要 PROBLEM TO BE SOLVED: To always ensure a high-accuracy exposure, without influence of partial irregularity of exposing regions on a photosensitive substrate surface. SOLUTION: Before exposure, a wafer W is moved in a two-dimensional plane, the positions at measuring points e.g. P4-P6 on the optical axis (Z) of the wafer surface are measured to see the irregularity, and the best imaging plane Fo of a projection optical system is measured. Face elements 62 of a wafer holder 25 for vacuum chucking the back side of the wafer W are driven by specified lengths along the optical axis to align the wafer surface with the best imaging plane Fo of the optical system, thus always ensuring a high- accuracy exposure.
申请公布号 JPH10209030(A) 申请公布日期 1998.08.07
申请号 JP19970021025 申请日期 1997.01.20
申请人 NIKON CORP 发明人 MIYAI TSUNEO
分类号 G03F7/207;G03F9/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/207
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