| 摘要 |
PROBLEM TO BE SOLVED: To prevent entry of static electricity into an IC device by forming a metal wiring layer in the region where an electrode layer on a major surface of a semiconductor substrate is not formed, keeping the interval for discharging static electricity from the electrode layer. SOLUTION: Bump electrodes 2 made of Au are provided along the periphery of the silicon substrate 1 at a predetermined interval. At the center of the silicon substrate 1, a GND wiring layer 3 is formed and one end thereof is provided via a bump 4. Moreover, a barrier metal layer 3b constituting of the double layers of Ti layer and Pt layer under the Ti layer is formed under the bump electrode 2. The barrier metal layer 3b and the corresponding end part a of the GND layer 3 are formed at such as interval D1 that static electricity is discharged between them. Therefore, when static electricity enters from the bump electrode 2, such static electricity is discharged toward the GND wiring layer 3, preventing entry thereof. |
