| 摘要 |
<p>PROBLEM TO BE SOLVED: To simplify a process by allowing a wafer to include at least one connection layer that is located on a contact or a barrier layer, and providing a plurality of patterned openings that are mutually and essentially aligned to the contact or the barrier layer without any offset. SOLUTION: The pattern of a contact or a barrier layer 210 and a connection layer 270 is, then, developed at a set of selected opening positions, thus a plurality of openings 230 and 240 are formed that are subjected to patterning being aligned essentially without any offset mutually. Then, an etching for a plurality of steps is performed. When the etching is completed, the layer of a photo resist material is eliminated. Finally, the mutual connection material is laminated to a contact or a via layer opening 230 and the mutual connection layer opening 240. Then, the laminated mutual connection material is polished to the surface of the contact or via layer 210, thus a selected opening position that is substantially aligned without an offset mutually is generated.</p> |
