发明名称 METHOD FOR MEASURING DENSITY OF THIN FILM
摘要 PROBLEM TO BE SOLVED: To calculate the densityρof a thin film on the surface of a sample by making the X-ray incident on the sample at a low angle, and detecting the reflected and refracted X-ray by the sample to be substituted in the prescribed formula. SOLUTION: The X-ray 1 is incident on a sample 10 at a low angle through a monochrometer 4 and a slit 5, the reflected X-ray 2 from the sample 10 is detected by a slit 6 and a detector 7, the critical angleθc of total reflection of the sample is obtained from the intensity distribution, the refracted X-ray 3 is detected from a slit 8 and a detector 9 to obtain the angleθ0 of the Bragg peak of the sample. A thin film on the surface of the sample 10 is removed, and the critical angleθc' of total reflection and the angleθ0' of the Bragg peak are obtained through the similar measurement. The data are substituted in the formula for operation, where the double sign means + whenθc>=θc', and - whenθc<θc'. Because the crystal which has been already well examined is used as the sample substrate, the volume of the unit cell and the kind of the atom, and the number in the unit cell of the atom are known, and the constitutional atom and the constitutional ratio are known, and these numerals can be substituted.
申请公布号 JPH10206354(A) 申请公布日期 1998.08.07
申请号 JP19970010507 申请日期 1997.01.23
申请人 SONY CORP 发明人 KUDO YOSHIHIRO;RYU KOSUKE;KAWATO SEIJI
分类号 G01N23/201;G01N23/207;H01L21/66;(IPC1-7):G01N23/201 主分类号 G01N23/201
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