发明名称 CLEANING EQUIPMENT AND CLEANING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent intrusion of chemicals from a treatment vessel to a drying chamber, and improve throughput, by shielding the treatment vessel and the drying chamber from each other, when a substrate to be treated is subjected to chemical treatment, by shielding an aperture part with a gas flow layer of inert gas. SOLUTION: Aperture parts 61, 62 which are, e.g. rectangular and used for delivering substrates to be treated (wafers) W are formed in the upper part and the lower part of a drying chamber 42. A close type lid 63 is arranged on the upper aperture part 61. A nitrogen-gas-curtain opening/closing mechanism 60 and a slide door mechanism 64 are installed on the lower aperture part 62. The nitrogen-gas-curtain closing mechanism 60 forms a gas flow layer 59c of nitrogen gas which is used for shielding the aperture part 62, by nitrogen gas spouting parts 59a arranged facing each other on the right side and the left side, and a nitrogen gas introducing part 59b. Thereby a treatment vessel (cleaning vessel) 41 and the drying chamber 42 can be shielded from each other when the wafer is subjected to chemical treatment, and intrusion of chemicals from the cleaning vessel 41 to the drying chamber 42 can be restrained.
申请公布号 JPH10209110(A) 申请公布日期 1998.08.07
申请号 JP19970011553 申请日期 1997.01.24
申请人 TOKYO ELECTRON LTD 发明人 KAMIKAWA YUJI;UENO KINYA;NAKAJIMA SATOSHI
分类号 H01L21/304;B08B3/04;B08B3/08;H01L21/00;(IPC1-7):H01L21/304 主分类号 H01L21/304
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