| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated photovolotaic device, wherein a back metal electrode film can be protected against a processing failure even if an amorphous semiconductor layer is thinned. SOLUTION: An integrated photovoltaic device is manufactured through such a method that a transparent conductive film 2, an amorphous semiconductor layer 3, and a back metal electrode film 4 are successively formed in this sequence on the one primary surface of a glass substrate 1, wherein at least a part of the transparent conductive film 2 at a back metal electrode processing part 5 is turned to an amorphous film 2a, and the back metal electrode processing part 5 is irradiated with a laser beam from below the other primary surface of the substrate 1 to remove the amorphous semiconductor layer 3 and the back metal electrode film 4 above the amorphous region 2a. |
