| 摘要 |
PROBLEM TO BE SOLVED: To provide an integration device by which a complete isolation of elements as well as the miniaturization can be attained. SOLUTION: The first gland electrode 3 formed on the bottom part of GaAs substrate 2, the second gland electrodes 6 formed between a plurality of elements 4 and the third gland electrode 8 formed on a dielectric layer 7 formed on the GaAs substrate 2 are mutually connected by via holes 9 at the shorter intervals than 1/2 of the wave length of applicable signals. Through these procedures, the elements 4 can be completely isolated by covering the periphery of the elements 4 with a waveguide type shield. Furthermore, the intervals between the elements 4 can be shortened thereby enabling the integration degree to be increased for miniaturizing the integrated device. |
