| 摘要 |
PROBLEM TO BE SOLVED: To prevent the charge values of the cell capacitances of nonselective memory cells from changing even if 'Cell Hi' is written in a memory cell connected to the line of the opposite polarity in the same cell capacitance. SOLUTION: A reset level generating circuit 2 which generates a potential of -Vcc/2 level and supplies the potential to a word driver 1 is provided. The reset level generation circuit 2 changes the levels of word lines except a word lineϕW1 with a selective level among a plurality of word linesϕW1,ϕW2,... to the -Vcc/2 level. Even if the data of 'Cell Hi' in a memory cell MC1 in a selective state, the cell transistors (QC2, etc.) of nonselective memory cells (MC2, etc.) are kept in an off-state, so that the charge values of nonselective cell capacitances (C, etc.) are kept in the states before writing.
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