ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide new structure regarding the formation of the auxiliary capacity of a pixel in an active matrix type liquid crystal display device which uses top gate type or bottom gate type thin film transistors. SOLUTION: A source line 18 and a 1st insulating thin film which covers metal wiring 19 in the same layer with it and has a high dielectric constant like silicon nitride are formed, and a 2nd flattened insulating film 21 is formed thereupon. Then the 2nd insulating film 21 is etched to form a hole part 2, thereby selectively exposing the 1st insulating film 20. A conductive film 23 which functions as a light shield film is formed thereupon, and capacity including the insulating film 20 as a dielectric is formed between the film 23 and metal wiring 19 as auxiliary capacity of a pixel. Further, the auxiliary capacity is provided selectively at a part where the influence of orientation disorder (disclination) of liquid crystal molecules is large to improve the substantial aperture rate.