| 摘要 |
<p>A GaN LED element (1) having a double hetero structure composed of a GaN layer, etc., formed on a sapphire substrate is mounted on an Si diode element (2) formed on a silicon substrate in a face down bonding state. P- and n-electrodes (5 and 6) of the LED element (1) are respectively connected to n- and p-electrodes (8 and 7) of the diode element (2) through Au micro-bumps (11 and 12), and the diode element (2) protects the LED element (1) from electrostatic breakdown. A rear-surface electrode (9) of the diode element (2) is connected to a lead frame (13a), and a bonding pad section (10) of the p-electrode (7) of the diode element (2) is connected to another lead frame (13b) through an Au wire (17).</p> |
