The production of single crystals of semiconductor material comprises producing a melt in an ampoule by melting solid starting material and optionally dopants. The melt is subjected to a combined magnetic field before and during crystal growth. The magnetic field consists of a rotating and a static magnetic field. Also claimed is an apparatus for carrying out the above process comprising: (a) a housing (1) with an ampoule (2) containing the starting material; (b) a heating system (4) producing the temperature profile necessary for crystal growth; (c) a mechanism or control for the relative movement between ampoule and temperature profile; and (d) a combined magnet system (9) arranged around the housing consisting of two inductors (13,14) for the rotating (11) and static (10) magnetic fields.
申请公布号
DE19704075(A1)
申请公布日期
1998.08.06
申请号
DE19971004075
申请日期
1997.02.04
申请人
FORSCHUNGSZENTRUM ROSSENDORF EV, 01474 SCHOENFELD-WEISIG, DE