发明名称 |
Halbleiterspeichervorrichtung mit Selbstauffrischungsfunktion |
摘要 |
Disclosed is a refresh address test circuit of a semiconductor memory device having a self-refresh function using a plurality of internal refresh address signals, comprising a plurality of the address test paths, each including a first sub-path with an initial logic level of the refresh address signal and a second sub-path of refresh address signal, a plurality of comparators, each receiving the initial logic level of the refresh address signal from the first sub-path and a present logic level of the refresh address signal from the second sub-path, a test output circuit for receiving the output signals generated from the plurality of comparators. <IMAGE> |
申请公布号 |
DE69319372(D1) |
申请公布日期 |
1998.08.06 |
申请号 |
DE1993619372 |
申请日期 |
1993.04.21 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD., SUWEON, KYUNGKI, KR |
发明人 |
KANG, KYUNG-WOO, SUWON-CITY, KYUNGKI-DO, KR |
分类号 |
G11C11/401;G11C11/406;G11C29/00;G11C29/02;G11C29/08;G11C29/12;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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