发明名称 |
Method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device |
摘要 |
A method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device with columns of memory elements grouped together to form portions of a bidimensional array of memory elements, the column redundancy circuitry comprising at least one plurality of non-volatile memory registers (RR1-RR4) each one associated to a respective redundancy column of redundancy memory elements and each one programmable to store an address of a defective column and an identifying code (MCS7-MCS10) for identifying the portion of the bidimensional array to which the defective column belongs, provides for supplying each non-volatile memory register (RR1-RR4) with column address signals (CABUS) and with a first subset (R1-R4) of row address signals (RABUS), which when one of the non-volatile memory registers (RR1-RR4) is to be programmed carry the address of a defective column and said identifying code (MCS7-MCS10) respectively, and for activating one signal of a second subset (R5-R8) of the row address signals (RABUS), supplied to programming selection means (6), for selecting one respective non-volatile memory register (RR1-RR4) of said plurality to cause the data carried by the column address signals (CABUS) and by the first subset (R1-R4) of the row address signals to be programmed into said one respective non-volatile memory register (RR1-RR4). <IMAGE> |
申请公布号 |
EP0668562(B1) |
申请公布日期 |
1998.08.05 |
申请号 |
EP19940830061 |
申请日期 |
1994.02.17 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PASCUCCI, LUIGI;OLIVO, MARCO |
分类号 |
G11C11/413;G11C11/401;G11C29/00;G11C29/04;(IPC1-7):G06F11/20 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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