发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor element, such as a field effect transistor, and an adjacent connection region including a via hole. A simple structure prevents leakage current from flowing from a p-type buffer layer to a source electrode of the field effect transistor through a backside electrode and a via hole upper electrode, avoiding degradation in the gate-source dielectric resistance. A groove having a depth extending from a surface of an n-type semiconductor layer through a n-type semiconductor layer and a p-type buffer layer isolates a field effect transistor from a via hole that extends from the surface of an n-type semiconductor layer to a second surface of a compound semiconductor substrate. The groove prevents leakage current from flowing in a backside electrode in the via hole. |
申请公布号 |
GB2311652(B) |
申请公布日期 |
1998.08.05 |
申请号 |
GB19960026387 |
申请日期 |
1996.12.19 |
申请人 |
* MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAOTO * ANDOH |
分类号 |
H01L21/764;H01L21/285;H01L21/338;H01L21/765;H01L21/768;H01L21/8232;H01L23/48;H01L27/06;H01L29/06;H01L29/417;H01L29/812;(IPC1-7):H01L21/76;H01L21/335;H01L29/772 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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