Method for fabricating a semiconductor memory capacitor

摘要

The present invention discloses a novel integrated circuit capacitor and a method of forming such a capacitor.This method can be used in conjunction with the formation of a dynamic random access memory array. The capacitor formation begins with a base electrode (18) adjacent an insulating region (26). This base electrode (18) can comprise either polysilicon or a metal. A layer (28) of a first material, such as a siliciding metal, is formed over the base electrode (18) as well as the adjacent insulating region. A self-aligned capacitor electrode (12) can then be formed by reacting the first material (28) with the base electrode (18) and removing unreacted portions of the first material (28) from the insulating region (26). A nitridation process is performed to form a conductive nitride layer (22) that will have a better oxidation resistance than a pure metal or metal silicide electrode. The capacitor is then completed by forming a dielectric layer (16) over the self-aligned capacitor electrode (12) and a second capacitor electrode (14) over the dielectric layer (16).