| 发明名称 |
Method and apparatus for reducing the first wafer effect |
| 摘要 |
<p>A method and apparatus are provided for reducing and eliminating the First Wafer Effect. Specifically, in a method or system (11) that employs a separate hot chamber (15) for hot deposition of material from a source (27) that may result in the First Wafer Effect (FWE material), a cold layer of the FWE material is deposited within the hot deposition chamber prior to deposition of the hot FWE material layer. <IMAGE></p> |
| 申请公布号 |
EP0856885(A2) |
申请公布日期 |
1998.08.05 |
| 申请号 |
EP19980300632 |
申请日期 |
1998.01.29 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG, HOUGONG;YAO, GONGDA |
| 分类号 |
H01L21/285;H01L21/02;H01L21/203;H01L21/3205;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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