发明名称 PROCESS FOR PRODUCING VERTICALLY CONNECTED SEMICONDUCTOR COMPONENTS
摘要 <p>PCT No. PCT/DE94/00486 Sec. 371 Date Nov. 3, 1995 Sec. 102(e) Date Nov. 3, 1995 PCT Filed May 2, 1994 PCT Pub. No. WO94/25981 PCT Pub. Date Nov. 10, 1994A process for producing components having a contact structure provides for vertical contact-making, in which, for the connection of a metal contact of a first component to a metal contact of a second component, the substrate is etched out, starting from the top, in a region provided for a vertical, conductive connection, this recess is filled with a metal so that said metal is connected to the surface of the metal contact, the rear side of the substrate is removed until the metal projects beyond the rear side, a metallization layer made of a metal having a low melting point, for example AuIn, is applied to the metal contact of the second component, the surface of the second component is provided with a planar layer, the two components are arranged vertically with respect to one another and a permanent contact is produced between the metal of the first component and the metallization layer of the second component by pressing one onto the other and heating.</p>
申请公布号 EP0698288(B1) 申请公布日期 1998.08.05
申请号 EP19940913486 申请日期 1994.05.02
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BERTAGNOLLI, EMMERICH, DR.;KLOSE, HELMUT, DR.
分类号 H01L21/768;H01L23/48;H01L25/065;H01L27/00;H01L27/06;(IPC1-7):H01L21/98 主分类号 H01L21/768
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